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High-Conductance Pathways in Ring-Strained Disilanes by Way of Direct σ‑Si−Si to Au Coordination
Author(s):
Nathaniel T. Kim, Haixing Li, Latha Venkataraman, James L. Leighton
Journal:
Journal of the American Chemical Society
Year:
2016
Volume:
138
Pages
11505-11508
DOI:
10.1021/jacs.6b07825
Abstract:
A highly conducting electronic contact between a strained disilane and Au is demonstrated through scanning tunneling microscope-based single-molecule measurements. Conformationally locked cis diastereomers of bis(sulfide)-anchor-equipped 1,2-disilaacenaphthenes readily form high-conducting junctions in which the two sulfide anchors bind in a bipodal fashion to one gold electrode, providing enough stability for a stable electrical contact between the Si–Si σ bond and the other electrode.
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