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High-Conductance Pathways in Ring-Strained Disilanes by Way of Direct σ‑Si−Si to Au Coordination

Author(s):

Nathaniel T. Kim, Haixing Li, Latha Venkataraman, James L. Leighton

Journal:

Journal of the American Chemical Society

Year:

2016

Volume:

138

Pages

11505-11508

DOI:

10.1021/jacs.6b07825

Abstract:

A highly conducting electronic contact between a strained disilane and Au is demonstrated through scanning tunneling microscope-based single-molecule measurements. Conformationally locked cis diastereomers of bis(sulfide)-anchor-equipped 1,2-disilaacenaphthenes readily form high-conducting junctions in which the two sulfide anchors bind in a bipodal fashion to one gold electrode, providing enough stability for a stable electrical contact between the Si–Si σ bond and the other electrode.

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