Large-Area Plasmonic-Crystal–Hot-Electron-Based Photodetectors

In view of their exciting optoelectronic light–matter interaction properties, plasmonic–hot-electron devices have attracted significant attention during the last few years as a novel route for photodetection and light-energy harvesting. Herein we report the use of quasi-3D large-area plasmonic crystals (PC) for hot-electron photodetection, with a tunable response across the visible and near-infrared. The strong interplay between the different PC modes gives access to intense electric fields and hot-carrier generation confined to the metal–semiconductor interface, maximizing injection efficiencies with responsivities up to 70 mA/W. Our approach, compatible with large-scale manufacturing, paves the way for the practical implementation of plasmonic–hot-electron optoelectronic devices.