Poly(o-toluidine) Nanowires Based Organic Field Effect Transistors: A Study on Influence of Anionic Size of Dopants and SWNTs as a Dopant
Author(s):
Prasanta Ghosh, Kunal Datta, Ashok Mulchandani, Sung-Hwan Han, Pankaj Koinkar, Mahendra D. Shirsat
Journal:
The Journal of Physical Chemistry C
Year:
2013
Volume:
117
Pages
15414-15424
DOI:
10.1021/jp404674j
Abstract:
Poly(o-toluidine) [P(OT)] nanowires electrode junction based organic field effect transistors (OFETs) with back-gated architecture are demonstrated. P(OT)
nanowires have been site specifically synthesized to bridge Au micropatterns on Si/SiO2
substrate by facile galvanostatic route. Dopants with various sizes of anions have been
employed during electrochemical synthesis of nanowires to study the possible impact of
the same on electrochemical, morphological, spectroscopic, electrical, and FET
characteristics. Observations show that varying the size of dopants significantly
modulates crucial characteristic features of the FETs especially charge carrier mobility
(μ) and on−off ratio (Ion/Ioff). A probable model of the observed behavior suggests the
anionic size of the dopants to be a dominant factor in deciding the conduction behavior of the FETs, and such rationalization is
supported by spectroscopic and electrical data obtained. The device fabricated with carboxylated SWNTs as dopant exhibited
−4 2 −1 −1 4 superior FET properties than its counterparts in terms of μ= 3.17 × 10 cm V s and Ion/Ioff = 1.85 × 10